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inchange semiconductor product specification silicon npn power transistors 2SD998 description ? with to-3pml package ? complement to type 2sb778 applications ? high power amplifier applications ? recommended for 45~50w audio frequency amplifier output stage pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions max unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i b base current 1.0 a p c collector dissipation t c =25 ?? 80 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD998 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 120 v v cesat collector-emitter saturation voltage i c =5a; i b =0.5a 2.5 v v be base-emitter on voltage i c =0.5a;v ce =5v 1.5 v i cbo collector cut-off current v cb =120v; i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe dc current gain i c =1a ; v ce =5v 55 160 f t transition frequency i c =1a ; v ce =5v 12 mhz c ob collector output capacitance f=1mhz;v cb =10v 170 pf ? h fe classifications r o 55-110 80-160
inchange semiconductor product specification 3 silicon npn power transistors 2SD998 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SD998

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